High-Purity Silicon Carbide Ceramics (SiC)

Sintered SiC with extreme hardness, plasma resistance and thermal conductivity — specified for semiconductor wafer carriers, seals and the harshest process environments.

Machined silicon carbide ceramic assemblies
Material Overview

Built for Plasma, Acids and 1600 °C

Our high-purity pressureless-sintered SiC (SSiC) is one of the few materials that survives fluorine plasma, strong acids and repeated thermal shocks while remaining dimensionally stable. In semiconductor fabs, that combination makes it the default choice for wafer carriers and etch-chamber wear parts.

  • High purity with low metallic impurities for wafer environments
  • Thermal conductivity 110–120 W/m·K with outstanding thermal shock resistance
  • Hardness 2600–2800 HV — near-diamond wear life
  • Inert to most acids and alkalis; low gas evolution under vacuum
  • Lapped, polished and CVD-coatable surfaces available
Typical Properties

Silicon Carbide Technical Data

Property (typical)DA-SC (SSiC)DA-SC-R (RBSiC)
Bulk density (g/cm³)3.10–3.153.05–3.10
Flexural strength (MPa)380–420250–350
Thermal conductivity (W/m·K, 20 °C)110–120≈ 100
C.T.E. (10⁻⁶/K, 20–1000 °C)4.24.3
Hardness (HV)2600–28002200–2500
Free Si contentNone8–12 %
Max. service temperature (°C, inert)≈ 1600≈ 1380

Typical values for reference; custom specifications and full test reports available on request.

Product Series by Application

Silicon Carbide Components by Industry

Semiconductor

Wafer-Process Components

Wafer carriers and susceptors for CVD/epitaxy, plasma focus rings, CMP retaining rings, cantilever paddles, boat pins and showerhead parts in high-purity SSiC.

Mechanical Seals

Seal Rings & Bearings

Stationary and rotating seal rings, thrust bearings and shaft sleeves for chemical, slurry and clean-water pumps — dry-running capable with SSiC/SSiC pairs.

Kiln & Furnace

Kiln Furniture

Beams, rollers, posts, setter plates and saggers for high-temperature firing of electronic ceramics, MLCC, powder metallurgy and technical glass.

Fluid & Wear

Nozzles & Liners

Sandblasting and descaling nozzles, spray nozzles, cyclone liners, slurry pump wear plates and blast-media components with multi-year service life.

New Energy

Energy & PV Equipment

Photovoltaic diffusion-furnace carriers, polysilicon casting crucible parts and hydrogen / solar-thermal components exposed to heat and corrosion.

Custom Machined

Ground-to-Print Parts

Complex milled and ground geometries with flatness and parallelism to ±0.005 mm, produced from STEP / DXF drawings with full inspection reports.

Real Product Photos

Silicon Carbide Product Gallery

Actual production parts from our facility — send us your drawing or target application and we will quote the same.

Frequently Asked Questions

Silicon Carbide Questions, Answered

What purity is your silicon carbide?

We supply high-purity sintered SiC (DA-SC, SSiC, free silicon content: none) with total metallic impurity kept at ppm level, plus a reaction-bonded grade (DA-SC-R, RBSiC, 8–12% free silicon) for larger, more cost-sensitive parts. Purity, density and grain structure are confirmed by certificate of analysis on request.

Why use SiC instead of alumina in a plasma etch chamber?

SiC has substantially better plasma erosion resistance in fluorine and chlorine chemistries, roughly four times the thermal conductivity of alumina (110–120 vs 26–30 W/m·K), excellent thermal-shock resistance and it operates to about 1600 °C in inert atmosphere. For long-life focus rings, chamber liners, showerhead plates and carrier hardware, SiC is usually the more economical choice over its service life.

What is the maximum service temperature of sintered SiC?

DA-SC retains its strength to about 1600 °C in inert or vacuum atmospheres. In oxidising air it forms a protective silica layer and can be used continuously to roughly 1400–1500 °C. Thermal-shock resistance is excellent because of its low expansion and high conductivity.

Do you make SiC focus rings, paddles and wafer carriers?

Yes — these are among our main semiconductor components. We produce SiC focus rings in the common 200 mm and 300 mm process-tool sizes, cantilever and robot paddles, wafer boats and carriers, gas injectors and mechanical seal rings. Most are produced to customer drawing rather than from a catalogue.

How is silicon carbide machined?

SiC is diamond-ground, lapped and polished — never conventionally machined. We hold ±0.005 mm on critical features and can produce sealing faces flat to within a few light bands for mechanical-seal duty. Because SiC is very hard (2600–2800 HV), grinding time and tool wear are the main cost drivers, which is why part design matters as much as material choice.

Quote My SiC Components

Send drawings or a sample description — material certificate and dimensional report included with every shipment.

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